1 - 1 HMC941A 0.5 db lsb gaas mmic 5-bit digital attenuator, 0.1 - 30 ghz v01.1016 electrical specifcations, t a = +25 c, with vdd = +5v, vss = -5v & vctl = 0/ +5v the HMC941A is ideal for: ? fiber optics & broadband telecom ? microwave radio & vsat ? military radios, radar & ecm ? space applications 0.5 db lsb steps to 15.5 db single positive control line per bit 0.5 db typical bit error high input ip3: +45 dbm die size: 2.35 x 1 x 0.1 mm the HMC941A die is a broadband 5-bit gaas ic digi - tal attenuator mmic chip. covering 0.1 to 30 ghz, the insertion loss is less than 4 db typical. the attenuator bit values are 0.5 (lsb), 1, 2, 4, 8, for a total attenu - ation of 15.5 db. attenuation accuracy is excellent at less than 0.5 db typical step error with an iip3 of +45 dbm. five control voltage inputs, toggled between +5v and 0v, are used to select each attenu - ation state. parameter frequency (ghz) min. typ. max. units insertion loss 0.1 - 18.0 ghz 18.0 - 30.0 ghz 3.3 4.3 4.3 5.1 db db attenuation range 0.1 - 30.0 ghz 15.5 db return loss (rf1 & rf2, all atten. states) 0.1 - 30.0 ghz 12 db attenuation accuracy: (referenced to insertion loss) 0.5 - 7.5 db states 8 - 15.5 db states 0.1 - 30.0 ghz 0.1 - 30.0 ghz (0.3 + 4% of atten. setting )max (0.3 + 5% of atten. setting) max db db input power for 0.1 db compression 0.1 - 0.5 ghz 0.5 - 30.0 ghz 22 26 dbm dbm input third order intercept point (two-tone input power= +8 dbm each tone) 0.1 - 0.5 ghz 0.5 - 30.0 ghz 45 43 dbm dbm switching characteristics trise, tfall (10/90% rf) ton/toff (50% ctl to 10/90% rf) 0.1 - 30.0 ghz 35 50 ns ns idd 0.1 - 30.0 ghz 3 5 7 ma iss 0.1 - 30.0 ghz -4 -6 -8 ma general description features functional diagram typical applications for price, delivery, and to place orders: analog devices, inc., one technology way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 ? order online at www.analog.com application support: phone: 1-800-analog-d information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifcations subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. at tenuators - chip 1
1 - 2 input return loss (only major states are shown) output return loss (only major states are shown) insertion loss vs. temperature normalized attenuation (only major states are shown) bit error vs. frequency (only major states are shown) bit error vs. attenuation state -6 -5 -4 -3 -2 -1 0 0 5 10 15 20 25 30 35 40 +25 c +85 c -55 c insertion loss (db) frequency (ghz) -50 -40 -30 -20 -10 0 0 5 10 15 20 25 30 35 40 il 0.5 db 1 db 2 db 4 db 8 db 15.5 db return loss (db) frequency (ghz) -50 -40 -30 -20 -10 0 0 5 10 15 20 25 30 35 40 il 0.5 db 1 db 2 db 4 db 8 db 15.5 db return loss (db) frequency (ghz) -20 -15 -10 -5 0 0 5 10 15 20 25 30 35 40 i.l 0.5 db 1 db 2 db 4 db 8db 15.5 db normalized attenuation (db) frequency (ghz) -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 0 4 8 12 16 10.0 ghz 20 ghz 30 ghz bit error (db) attenuation state (db) -1.5 -1 -0.5 0 0.5 1 1.5 0 5 10 15 20 25 30 35 40 i.l 0.5 db 1 db 2 db 4 db 8 db 15.5 db bit error (db) frequency (ghz) HMC941A v01.1016 0.5 db lsb gaas mmic 5-bit digital attenuator, 0.1 - 30 ghz at tenuators - chip 1 for price, delivery, and to place orders: analog devices, inc., one technology way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 ? order online at www.analog.com application support: phone: 1-800-analog-d
1 - 3 truth table control voltage input attenuation state rf1 - rf2 p4 8 db p3 4 db p2 2 db p1 1 db p0 0.5 db high high high high high reference i.l. high high high high low 0.5 db high high high low high 1 db high high low high high 2 db high low high high high 4 db low high high high high 8 db low low low low low 15.5 db any combination of the above states will provide an attenuation approximately equal to the sum of the bits selected. 20 30 40 50 60 0 5 10 15 20 25 30 35 40 il 0.5 db 1db 2 db 4 db 8 db 15.5 db ip3 (dbm) frequency (ghz) HMC941A v01.1016 0.5 db lsb gaas mmic 5-bit digital attenuator, 0.1 - 30 ghz relative phase vs. frequency (only major states are shown) step attenuation vs. attenuation state input ip3 vs. temperature (minimum attenuation state) input ip3 over major attenuation states input power for 0.1 db compression -10 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 i.l 0.5 db 1 db 2 db 4 db 8 db 15.5 db relative phase (deg) frequency (ghz) -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 0 4 8 12 16 10 ghz 20 ghz 30 ghz step attenuation (db) attenuation state (db) 20 30 40 50 60 0.1 1 10 100 +25c +85c -55c ip3 (dbm) frequency (ghz) 6 10 14 18 22 26 30 34 0.01 0.1 1 10 100 p0.1db (dbm) frequency (ghz) for price, delivery, and to place orders: analog devices, inc., one technology way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 ? order online at www.analog.com application support: phone: 1-800-analog-d at tenuators - chip 1
1 - 4 control voltage bias voltages & currents absolute maximum ratings state bias condition low 0 to 0.8v @ 1 a (typ) high 2 to 5v @ 1 a (typ) vdd +5v @ 5 ma (typ) vss -5v @ 6 ma (typ) rf input power (0.5 to 30 ghz) +27 dbm control voltage (p0 to p4) vdd + 0.5v vdd +7 vdc vss -7 vdc channel temperature 150 c continuous pdiss (t=85 c) (derate 6.97 mw/c above 85c) 0.453 w thermal resistance (channel to die bottom) 143.5 c/w storage temperature -65 to + 150 c operating temperature -55 to +85 c esd sensitivity (hbm) class 1a electrostatic sensitive device observe handling precautions HMC941A v01.1016 0.5 db lsb gaas mmic 5-bit digital attenuator, 0.1 - 30 ghz die packaging information [1] standard alternate wp-9 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. outline drawing 1. all dimensions are in inches (millimeters). 2. typical bond pad is .004 square. 3. typical bond pad spacing is .006 center to center except as noted. 4. backside metalization: gold 5. backside metal is ground 6. bond pad metalization: gold at tenuators - chip 1 for price, delivery, and to place orders: analog devices, inc., one technology way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 ? order online at www.analog.com application support: phone: 1-800-analog-d
1 - 5 assembly diagram HMC941A v01.1016 0.5 db lsb gaas mmic 5-bit digital attenuator, 0.1 - 30 ghz pad number function description interface schematic gnd die bottom must be connected to rf ground. 1, 9 rf1, rf2 this pad is dc coupled and matched to 50 ohm. blocking capacitors are required if rf line potential is not equal to 0v. 2 vss negative bias -5v 3 - 7 p0 - p4 see truth table and control voltage table. 8 vdd positive bias +5v pad descriptions for price, delivery, and to place orders: analog devices, inc., one technology way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 ? order online at www.analog.com application support: phone: 1-800-analog-d at tenuators - chip 1
1 - 6 HMC941A v01.1016 0.5 db lsb gaas mmic 5-bit digital attenuator, 0.1 - 30 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec - tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom - mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab at tenuators - chip 1 for price, delivery, and to place orders: analog devices, inc., one technology way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 ? order online at www.analog.com application support: phone: 1-800-analog-d
|
